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2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3417
Switching Regulator Applications
* * * * * * Reverse-recovery time: trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ C C
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 83.3 Unit C/W C/W
JEDEC JEITA TOSHIBA
2-10S2B
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 12.2 mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
Weight: 1.5 g (typ.)
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2SK3417
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 2.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 100 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min 30 500 2.0 2.5 Typ. 1.6 4.0 780 60 200 12 Max 10 100 4.0 1.8 pF Unit A V A V V S
10 V VGS 0V 15 RL = 90 VDD 225 V - VOUT

ns

Turn-ON time Switching time Fall time
ton
25
tf
15

nC
Duty < 1%, tw = 10 s = Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 5 A - 60 17 11 6

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 60 0.1 Max 5 20 -1.7 Unit A A V ns C
Marking
K3417
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3417
ID - VDS
5 Common source Tc = 25C Pulse test 15 10 6.5 6 8 6.25 10 Common source Tc = 25C Pulse test
ID - VDS
15 10 7
4
Drain current ID (A)
3
Drain current ID (A)
6.5 6 6 4
5.75
2
5.5 5.25
1
VGS = 5 V
2
5.5 VGS = 5 V
0 0
4
8
12
16
20
0 0
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
10 Common source VDS = 20 V Pulse test 20
VDS - VGS
Common source Tc = 25C Pulse test
8
VDS (V) Drain-source voltage
16
Drain current ID (A)
6 100
12 ID = 5 A 8
4
2 Tc = 25C 0 0 2 4 6 8 10
4
2.5 1.2
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
10 Common source VDS = 20 V Pulse test Tc = 25C 100 10 Common source Tc = 20 C Pulse test
RDS (ON) - ID
(S)
5 3
Forward transfer admittance Yfs
Drain-source on resistance RDS (ON) ()
VGS = 10 V 15
1
1
0.5 0.3
0.1 0.1
1
10
0.1 0.1
1
10
Drain current ID (A)
Drain current ID (A)
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2SK3417
RDS (ON) - Tc RDS (ON) ()
10 Common source VGS = 10 V Pulse test 10 Common source Tc = 25C Pulse test
IDR - VDS
8
Drain-source on resistance
6
Drain reverse current IDR
(A)
1
4
ID = 5 A 2.5
2
1.2
10 5 3 -0.4 VGS = 0, 1 V -0.8 -1.2 -1.6
0 0
40
80
120
160
0.1 0
Channel temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
2000 1000 500 Ciss 5
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
4
(pF)
300
3
Capacitance C
100 Coss 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10
2
1
10
Crss
0 0
40
80
120
160
5 0.1
30 50
100
Channel temperature Tc
(C)
Drain-source voltage
VDS (V)
PD - Tc
50 500
Dynamic input/output characteristics
Common source ID = 5 A Tc = 25C Pulse test VDS VDD = 100 V 300 200 200 VGS 100 4 400 8 12 20
(V)
Drain power dissipation PD (W)
40
400
16
VDS
Drain-source voltage
20
10
10 0
40
80
120
160
200
0 0
5
10
15
20
0 25
Case temperature
Tc
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
30
VGS
(V)
2SK3417
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
1
Duty = 0.5
0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.57C/W 0.001 10 100 1m 10 m 100 m 1 10
Pulse width
tw
(S)
Safe operating area
100 200
EAS - Tch
30
Avalanche energy EAS (mJ)
ID max (pulsed) *
160
10 ID max (continuous) *
100 s *
120
Drain current ID (A)
3 DC operation Tc = 25C 1 ms *
80
1
40
0.3 0 25 0.1 * 0.03 Single nonrepetitive pulse Tc = 25C 50 75 100 125 150
Channel temperature (initial) Tch (C)
Curves must be derated linearly with increase in temperature. VDSS max 100 1000
0.01 1
10
15 V -15 V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 90 V, L = 12.2 mH
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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